Semiconductor device having vertical fence structures
US11462553B2 · kind B2 · utility
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2References
20Claims
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Assignee
Inventors
Key dates
| Filing date | Sep 28, 2020 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Mar 27, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices including a substrate including a cell array region and a through electrode region, an electrode stack on the substrate and including electrodes, vertical structures penetrating the electrode stack within the cell array region, vertical fence structures within an extension region and surrounding the through electrode region, and insulating layers being inside a perimeter defined by the vertical fence structures and being at the same level as the electrodes may be provided. The electrodes may include first protrusions protruding between the vertical fence structures in a plan view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.