Methods of fabricating capacitor and semiconductor device and semiconductor devices and apparatus including the same
US11462610B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 2020 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Nov 11, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
Abstract
Capacitor forming methods may include sequentially forming a first mold layer, a first support material layer, and a second mold layer on a substrate, forming a mask pattern on the second mold layer, forming a recess in the second mold layer, the first support material layer, and the first mold layer using the mask pattern as a mask, forming a lower electrode in the recess, removing the mask pattern by a dry cleaning process, reducing a width of an upper portion of the lower electrode, removing the first mold layer, forming a dielectric layer on a surface of the lower electrode, and forming an upper electrode on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.