Semiconductor device, and manufacturing method thereof
US11462628B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 2018 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Mar 22, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/307
Abstract
A semiconductor device, and a manufacturing method thereof. The method includes: providing a semiconductor substrate provided with a body region, a gate dielectric layer, and a field oxide layer, formed on the semiconductor substrate; forming a gate polycrystalline, the gate polycrystalline covering the gate dielectric layer and the field oxide layer and exposing at least one portion of the field oxide layer; forming a drift region in the semiconductor substrate by ion implantation using a drift region masking layer as a mask, removing the exposed portion of the field oxide layer by further using the drift region masking layer as the mask to form a first field oxide self-aligned with the gate polycrystalline; forming a source region in the body region, and forming a drain region in the drift region; forming a second field oxide on the semiconductor substrate; and forming a second field plate on the second field oxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.