Semiconductor device
US11462633B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 9, 2020 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Sep 9, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/142
Abstract
A semiconductor device includes first and second electrode, a semiconductor part therebetween, and first and second control electrode. The first control electrode is provided in a first trench between the first electrode and the semiconductor part. The second control electrode is provided in a second trench between the second electrode and the semiconductor part. The semiconductor part includes first, third, fifth and sixth layers of a first conductivity type and second and fourth layers of a second conductivity type. The second layer is provided the first layer and the first electrode. The third layer is provided between the second layer and the first electrode. The fourth layer is provided between the first layer and the second electrode. The sixth layer is provided between the first layer and the second electrode. The second electrode is electrically connected to the first layer via a first-conductivity-region including the sixth layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.