Semiconductor device and manufacturing method for the same
US11462637B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 4, 2021 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Mar 4, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
Abstract
According to one embodiment, a semiconductor device includes first, second, and third conductive members, a semiconductor member, and a first insulating member. The semiconductor member includes a first semiconductor region provided on the first conductive member, a second semiconductor region provided on a portion of the first semiconductor region, and a third semiconductor region provided on the second semiconductor region. An impurity concentration in the third semiconductor region is greater than in the first semiconductor region. The second conductive member includes a first conductive portion electrically connected to the second and third semiconductor regions. The third conductive member is provided on an other portion of the first semiconductor region. At least a portion of the first insulating member is between the semiconductor member and the third conductive member. The at least a portion of the first insulating member electrically insulates between the semiconductor member and the third conductive member.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.