Field-effect transistor, display element, image display device, and system
US11462646B2 · kind B2 · utility
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Key dates
| Filing date | Mar 18, 2020 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Oct 29, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K59/1213
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A field-effect transistor including a semiconductor layer formed of an n-type metal oxide semiconductor, wherein the n-type metal oxide semiconductor includes indium oxide, wherein the indium oxide is n-type doped through introduction of one or more kinds of cations as dopants, and wherein the n-type metal oxide semiconductor has a peak detected at an angle corresponding to a (222) plane of indium oxide having a bixbite structure in an X-ray diffraction method using a two-dimensional detector.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.