Nanophotonic hot-electron devices for infrared light detection
US11462656B2 · kind B2 · utility
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8Claims
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Key dates
| Filing date | Apr 20, 2018 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Apr 15, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/413
Abstract
Disclosed are infrared (IR) light detectors. The detectors operate by generating hot electrons in a metallic absorber layer on photon absorption, the electrons being transported through an energy barrier of an insulating layer to a metal or semiconductor conductive layer. The energy barrier is set to bar response to wavelengths longer than a maximum wavelength. Particular embodiments also have a pattern of metallic shapes above the metallic absorber layer that act to increase photon absorption while reflecting photons of short wavelengths; these particular embodiments have a band-pass response.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.