CMOS-compatible protonic resistive devices
US11462683B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 22, 2021 |
| Grant date | Oct 4, 2022 |
| Priority date | — |
| Expiry date | Apr 22, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/52
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Described are CMOS-compatible protonic resistive devices (e.g., processing elements and/or memory elements). In embodiments, a protonic resistive memory can be formed from a proton-sensitive metal oxide channel where the concentration of protons intercalated inside the layer is controlled to modulate its conductivity. The protons can initially be supplied to the material stack by an implantation method. Irradiation techniques can be implemented to increase the concentration and conductivity of protons inside the materials. Some designs can put the active layer and reservoir in direct contact, creating an electrolyte-free device. Designs provide scalable solutions for full-scale Si-integration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.