Retention improvement by high-k encapsulation of RRAM devices

US11462684B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Albert Chen · Portland, US
• Nathan Strutt · Beaverton, US
• Oleg Golonzka · Beaverton, US
• Pedro Quintero · Beaverton, US
• Christopher J. Jezewski · Portland, US
• Elijah V. Karpov · Portland, US

Key dates

• Filing date: Dec 19, 2018
• Grant date: Oct 4, 2022
• Expiry date: Feb 3, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

An RRAM device is disclosed. The RRAM device includes a bottom electrode, a high-k material on the bottom electrode, a top electrode, a top contact on the top electrode and an encapsulating layer of Al2O3. The encapsulating layer encapsulates the bottom electrode, the high-k material, the top electrode and the top contact.