Optoelectronic devices and methods of making the same

US11462688B2 · kind B2 · utility

Assignee

• Alliance for Sustainable Energy, LLC · US

Inventors

• Axel Finn PALMSTROM · Lompoc, US
• Tomas Leijtens · Emerald Hills, US
• Joseph Jonathan Berry · Boulder, US
• David Todd Moore · Ithaca, US

Key dates

• Filing date: Sep 27, 2019
• Grant date: Oct 4, 2022
• Expiry date: Apr 1, 2040

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

The present disclosure relates to a device that includes a first layer that includes at least one of a semiconducting material, a hole transport material (HTM), and/or an electron transport material (ETM), a second layer, and a third layer that includes a material that is at least one of transparent or conductive, where the second layer is positioned between the first layer and the third layer, the first layer, the second layer, and the third layer are in electrical contact with each other, and the third layer has a first thickness between greater than zero nm and about 100 nm. In some embodiments of the present disclosure, the semiconducting material may include a perovskite.