Photodetector device including a photoactive semiconductor over a conductor pattern and method of making the same

US11469282B2 · kind B2 · utility

Assignee

• Flexenable Limited · GB

Inventors

• Brian Asplin · Cambridge, GB
• Shane Norval · Cambridge, GB
• Jan Jongman · Cambridge, GB
• Patrick Too · Cambridge, GB

Key dates

• Filing date: Oct 1, 2018
• Grant date: Oct 11, 2022
• Expiry date: May 6, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K59/1201

Abstract

A technique comprising: forming an insulator over a first conductor pattern; patterning the insulator to form an insulator pattern which exposes the first conductor pattern in one or more via regions; forming a second conductor pattern over the insulator pattern, which second conductor pattern contacts said first conductor pattern in said one or more via regions; creating a more even topographic profile in said one or more via regions, with the second conductor pattern exposed outside the one or more via regions; forming a semiconductor (24) over the second conductor pattern for charge carrier transfer between the second conductor pattern and the semiconductor; and depositing a third conductor (26) over the semiconductor, for charge carrier transfer between the third conductor (26) and the semiconductor (24).