Self-aligned trench MOSFET and IGBT structures and methods of fabrication
US11469313B2 · kind B2 · utility
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8References
14Claims
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Key dates
| Filing date | Jan 19, 2021 |
| Grant date | Oct 11, 2022 |
| Priority date | — |
| Expiry date | Jan 19, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A self-aligned p+ contact MOSFET device is provided. A process to manufacture the device includes forming oxide plugs on top of gate trenches, conducting uniform silicon mesa etch back, and forming oxide spacers to form contact trenches.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.