Photodiode, method for preparing the same, and electronic device

US11469336B2 · kind B2 · utility

Assignee

• BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD. · CN

Inventors

• Jianhua Du · Beijing, CN
• Chao Li · Zhengzhou, CN
• Zhaohui Qiang · Beijing, CN
• Yupeng Gao · Beijing, CN
• Feng Guan · Beijing, CN
• Rui Huang · Beijing, CN
• Zhi Wang · Beijing, CN
• Yang Lv · Suzhou, CN
• Chao Luo · Tangshan City, CN

Key dates

• Filing date: Jan 17, 2020
• Grant date: Oct 11, 2022
• Expiry date: Jan 17, 2040

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/548

Abstract

The present disclosure relates to a photodiode, a method for preparing the same, and an electronic device. The photodiode includes: a first electrode layer and a semiconductor structure that are stacked, a surface of the semiconductor structure away from the first electrode layer having a first concave-convex structure; and a second electrode layer arranged on a surface of the semiconductor structure away from the first electrode layer, a surface of the second electrode layer away from the first electrode layer having a second concave-convex structure.