Semiconductor chip of light emitting diode and manufacturing method thereof

US11469349B2 · kind B2 · utility

Assignee

• XIAMEN CHANGELIGHT CO., LTD. · CN

Inventors

• Xingen WU · Xiamen, CN
• Junxian Li · Zhejiang, CN
• Yingce LIU · Xiamen, CN
• Zhendong Wei · Xiamen, CN
• Hongyi Zhou · Niskayuna, US

Key dates

• Filing date: Jul 16, 2019
• Grant date: Oct 11, 2022
• Expiry date: Apr 11, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/034

Abstract

A semiconductor chip of a LED and a manufacturing method thereof are disclosed. The semiconductor chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, and at least one semiconductor exposing portion extending from the P-type semiconductor layer to the N-type semiconductor layer. The semiconductor chip further includes one or more current blocking layers, a transparent conductive layer, an N-type electrode, and a P-type electrode, wherein the current blocking layer encapsulates the P-type semiconductor in such a manner to be stacked on the P-type semiconductor layer. The transparent conductive layer has one or more through holes corresponding to the one or more current blocking layers respectively. The N-type electrode is stacked on the N-type semiconductor layer and the P-type electrode is stacked on the N-type semiconductor layer. The P-type prongs of the P-type electrode are retained in the through holes of the transparent conductive layer respectively.