Formation of nanoporous copper interconnect for electrical connection
US11469358B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 19, 2019 |
| Grant date | Oct 11, 2022 |
| Priority date | — |
| Expiry date | Feb 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Embodiments relate to nanoporous copper interconnects on a first body for electrically connecting to a second body. To fabricate the nanoporous copper interconnect, a zinc-copper alloy is deposited on recesses on the surface of the first body, and then the zinc is removed from the zinc-copper alloy to obtain nanoporous copper. The first body and the second body can be attached using bonding between oxide surfaces of the two bodies or be provided with underfill between the two bodies. The nanoporous copper electrically connects to an active layer or electrical components of the first body and the second bodies. Using nanoporous copper as interconnects is advantageous, among other reasons, because it can be formed at a low temperature, it is compatible with a standard complementary metal-oxide-semiconductor (CMOS) process, it provides good electrical conductivity, and it is less likely to cause issues due to migration of material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.