Filter with an enclosure having a micromachined interior using semiconductor fabrication
US11470695B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2020 |
| Grant date | Oct 11, 2022 |
| Priority date | — |
| Expiry date | Feb 14, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01P1/2053
- WIPO fieldTelecommunications
- WIPO sectorElectrical engineering
Abstract
An exemplary semiconductor technology implemented microwave filter includes a dielectric substrate with metal traces on one surface that function as frequency selective circuits and reference ground. Other metal traces on the other surface of the substrate also provide reference ground. Bottom and top enclosures that enclose the substrate have respective interior recesses with deposited continuous metal coatings. A plurality of metal bonding bumps or bonding wall extends outwardly from the projecting walls of the bottom and top enclosures. The bonding bumps on the bottom and top enclosures engage reference ground metal traces on respective surfaces of the substrate. As a result of applied pressure, the bonding bumps and respective reference ground metal traces together with the through-substrate vias form a metal-to-metal singly-connected ground reference structure for the entire circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.