Precursor compounds for atomic layer deposition (ALD) and chemical vapor deposition (CVD) and ALD/CVD process using the same
US11472821B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Oct 25, 2018 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Oct 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to precursor compounds, and more particularly to nonpyrophoric precursor compounds suitable for use in thin film deposition through atomic layer deposition (ALD) or chemical vapor deposition (CVD), and to an ALD/CVD process using the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.