Methods of determining operating conditions of silicon carbide power MOSFET devices associated with aging, related circuits and computer program products
US11474145B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Jun 10, 2020 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Jan 29, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2644
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Embodiments according to the invention can provide methods of testing a SiC MOSFET, that can include applying first and second voltage levels across a gate-source junction of a SiC MOSFET and measuring first and second voltage drops across a reverse body diode included in the SiC MOSFET responsive to the first and second voltage levels, respectively, to provide an indication of a degradation of a gate oxide of the SiC MOSFET and an indication of contact resistance of the SiC MOSFET, respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.