Power semiconductor module and power conversion apparatus
US11476170B2 · kind B2 · utility
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1References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2018 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Mar 18, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02P27/06
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor module includes an insulating substrate, a first conductive circuit pattern, a second conductive circuit pattern, a first semiconductor device, a second semiconductor device, a sealing member, and a first barrier layer. The sealing member seals the first semiconductor device, the second semiconductor device, the first conductive circuit pattern, and the second conductive circuit pattern. At least one of the first barrier layer and the sealing member includes a first stress relaxation portion. This configuration improves the reliability of the power semiconductor module.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.