Inverter
US11476179B2 · kind B2 · utility
0Cited by
3References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2016 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Oct 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor package comprising: a substrate; a first transistor in thermal contact with the substrate, wherein the transistor comprises a gate; the substrate sintered to a heat sink through a sintered layer; an encapsulant that at least partially encapsulates the first transistor; and a Kelvin connection to the transistor gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.