Semiconductor device structure comprising source and drain protective circuits against electrostatic discharge (ESD)
US11476207B2 · kind B2 · utility
1Cited by
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8Claims
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Key dates
| Filing date | Oct 23, 2019 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Aug 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate disposed on the semiconductor substrate. The semiconductor device structure also includes a source doped region and a drain doped region on two opposite sides of the gate. The semiconductor device structure further includes a source protective circuit and a drain protective circuit. From a side perspective view, a first drain conductive element of the source protective circuit partially overlaps a first source conductive element of the drain protective circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.