Solid-state image pickup device
US11476286B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 2020 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Nov 1, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.