Semiconductor device and method of manufacturing semiconductor device
US11476326B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jan 21, 2019 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Jan 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.