Semiconductor device and method for manufacturing the same
US11476360B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 18, 2020 |
| Grant date | Oct 18, 2022 |
| Priority date | — |
| Expiry date | Dec 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: an inversion type semiconductor element that includes: a substrate having a first conductivity type or a second conductivity type; a first conductivity type layer formed on the substrate; a second conductivity type region that is formed on the first conductivity type layer; a JFET portion that is formed on the first conductivity type layer, is sandwiched by the second conductivity type region to be placed; a source region that is formed on the second conductivity region; a gate insulation film formed on a channel region that is a part of the second conductivity type region; a gate electrode formed on the gate insulation film; an interlayer insulation film covering the gate electrode and the gate insulation film, and including a contact hole; a source electrode electrically connected to the source region through the contact hole; and a drain electrode formed on a back side of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.