Photodetection device having a lateral cadmium concentration gradient in the space charge zone

US11476380B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Clément Lobre · Grenoble, FR
• Florent Rochette · Seyssinet-Pariset, FR

Key dates

• Filing date: Mar 31, 2021
• Grant date: Oct 18, 2022
• Expiry date: Mar 31, 2041

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/306

Abstract

Photo-detection device (100) including a semiconductor substrate (110) made of CdxHg1-xTe, with an N-doped region (120), a P-doped region (130), and a concentrated casing (150) only located in the P-doped region and having an average cadmium concentration greater than the average cadmium concentration in the N-doped region.According to the invention, the concentrated casing (150) has a cadmium concentration gradient, defining therein at least one intermediate gap zone (151) and at least one high gap zone (152), and the intermediate gap zone (151) is in direct physical contact with an electrical contact block (170).A significant reduction in the dark current and an optimal charge carrier collection are thus combined.