Photomask with enhanced contamination control and method of forming the same
US11480869B2 · kind B2 · utility
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3References
20Claims
0Family size
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Key dates
| Filing date | Apr 15, 2020 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Apr 15, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/80
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photomask includes a substrate, a multilayer stack disposed over the substrate and configured to reflect a radiation, a capping layer over the multilayer stack, and an anti-reflective layer over the capping layer. The anti-reflective layer comprises a first pattern, wherein the first pattern exposes the capping layer and is configured as a printable feature. The photomask also includes an absorber spaced apart from the printable feature from a top-view perspective.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.