Patent · US Active

Patterned organometallic photoresists and methods of patterning

US11480874B2 · kind B2 · utility

0Cited by
10References
23Claims
0Family size

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Key dates

Filing dateOct 16, 2019
Grant dateOct 25, 2022
Priority date
Expiry dateMay 13, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG03F7/425
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A rinse process is described for processing an initially patterned structure formed with an organometallic radiation sensitive material, in which the rinse process can remove portions of the composition remaining after pattern development to make the patterned structure more uniform such that a greater fraction of patterned structures can meet specifications. The radiation sensitive material can comprise alkyl tin oxide hydroxide compositions. The rinsing process can be effectively used to improve patterning of fine structures using extreme ultraviolet light.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.