Patent · US Active

Memory system and method of controlling memory system

US11482287B2 · kind B2 · utility

0Cited by
4References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 3, 2021
Grant dateOct 25, 2022
Priority date
Expiry dateApr 29, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/5621
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory system includes a memory and a controller. The memory includes at least a first memory cell and a second memory cell. The controller can determine a first stress type that the first memory cell received or a second stress type that the second memory cell received based on a change amount between a first read threshold voltage to read data from the first memory cell when having received stress, and a second read threshold voltage to read data from the first memory cell when having received no stress.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.