Patent · US Active

Non-volatile storage with processive writes

US11482292B1 · kind B1 · utility

3Cited by
12References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 23, 2021
Grant dateOct 25, 2022
Priority date
Expiry dateJun 23, 2041

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2211/5648
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A non-volatile storage system includes a control circuit connected to non-volatile memory cells provides for progressive writing of data. That is, existing data is overwritten by new data without performing a traditional erase operation that changes the threshold voltage of the memory cells back to the traditional or original erase state. In one example, new data is written on top of old data using shifted threshold voltage distributions. Some embodiments include writing MLC data over SLC data, using intermediate erase threshold voltage distributions and/or automatically detecting which threshold voltage distributions are currently being used to store data.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.