Power semiconductor device with first and second sealing resins of different coefficient of thermal expansion
US11482462B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2017 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Nov 19, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An object of the present invention is to suppress a crack in a sealing resin and a warpage in a semiconductor device in a power semiconductor device. A power semiconductor device includes: a semiconductor element; a terminal; a chassis; and a sealing resin sealing the semiconductor element and the terminal in the chassis. The sealing resin includes: a first sealing resin covering at least the semiconductor element; and a second sealing resin formed on an upper portion of the first sealing resin, and in an operation temperature of the semiconductor element, the first sealing resin has a smaller linear expansion coefficient than the second sealing resin, and a difference of a linear expansion coefficient between the first sealing resin and the terminal is smaller than a difference of a linear expansion coefficient between the second sealing resin and the terminal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.