Semiconductor device and method of manufacturing the same
US11482489B2 · kind B2 · utility
0Cited by
4References
5Claims
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Key dates
| Filing date | Aug 11, 2020 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Jan 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/27
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a semiconductor device includes a substrate, an interconnect layer, a layer stack, and a first silicon nitride layer. The interconnect layer includes a transistor provided on the substrate and a first interconnect electrically coupled to the transistor and is provided above the transistor. The layer stack is provided above the interconnect layer and includes conductive layers stacked with an insulation layer interposed between two of conductive layers of each pair of conductive layers. The first silicon nitride layer is provided between the interconnect layer and the layer stack.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.