Semiconductor device and imaging unit
US11482548B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2019 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Feb 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a semiconductor device having a structure suitable for higher integration. The semiconductor device includes a transistor that includes a gate section, a first diffusion layer, and a second diffusion layer. The semiconductor device further includes a first electrically-conductive section a second electrically-conductive section that is electrically insulated from the first electrically-conductive section, a first storage element that is located between the first diffusion layer and the first electrically-conductive section and is electrically coupled to each of the first diffusion layer and the first electrically-conductive section, and a second storage element that is located between the second diffusion layer and the second electrically-conductive section and is electrically coupled to each of the second diffusion layer and the second electrically-conductive section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.