Thin film transistor array substrate and electronic device including the same
US11482623B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2020 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Feb 10, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6755
Abstract
Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.