Double Schottky-barrier diode

US11482628B2 · kind B2 · utility

Assignee

• University of Electronic Science and Technology of China · CN

Inventors

• Yong Zhang · Nanhu, CN
• Chengkai Wu · Chengdu, CN
• Han Wang · Shanghai, CN
• Haomiao Wei · Chengdu, CN
• Ruimin Xu · Chengdu, CN
• Bo Yan · Suzhou, CN

Key dates

• Filing date: Oct 23, 2020
• Grant date: Oct 25, 2022
• Expiry date: Oct 23, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/852

Abstract

A double Schottky-barrier diode includes a semi-insulating substrate, a left mesa formed by growth and etching on the semi-insulating substrate, a middle mesa formed by growth and etching on the semi-insulating substrate, a right mesa formed by growth and etching on the semi-insulating substrate, two anode probes and two air-bridge fingers. The two Schottky contacts are closely fabricated on the same mesa (middle mesa) in a back-to-back manner to obtain even symmetric C-V characteristics and odd symmetric I-V characteristics from the device level. The output of a frequency multiplier fabricated using the double Schottky-barrier diode only has odd harmonics, but no even harmonics, which is suitable for the production of high-order frequency multipliers. The cathodes of the two Schottky contacts are connected by the buffer layer without ohmic contact.