Method of fabricating a variable resistance memory device
US11482670B2 · kind B2 · utility
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21Claims
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Key dates
| Filing date | Jun 23, 2020 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Nov 20, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A method of fabricating a variable resistance memory device includes: forming a bottom electrode on a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer has a first trench that exposes the bottom electrode; forming a variable resistance layer in the first trench; and irradiating the variable resistance layer with a laser, wherein the variable resistance layer is irradiated by the laser for a time of about 1.8 μs to about 54 μs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.