Elastic wave device, high-frequency front-end circuit, and communication device
US11482983B2 · kind B2 · utility
1Cited by
2References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 26, 2019 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Aug 5, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H9/72
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An elastic wave device includes a support substrate made of silicon, a piezoelectric film disposed directly or indirectly on the support substrate, and an interdigital transducer electrode disposed on one surface of the piezoelectric film. A higher-order mode acoustic velocity of propagation through the piezoelectric film is equal or substantially equal to an acoustic velocity Vsi=(V1)1/2 of propagation through silicon or higher than the acoustic velocity Vsi, where Vsi is specified by V1 among solutions V1, V2, and V3 with respect to x derived from Ax3+Bx2+Cx+D=0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.