BAW resonator, RF filter, multiplexer and method of manufacturing a BAW resonator
US11482985B2 · kind B2 · utility
1Cited by
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26Claims
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Key dates
| Filing date | Feb 27, 2019 |
| Grant date | Oct 25, 2022 |
| Priority date | — |
| Expiry date | Feb 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2003/045
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A BAW resonator with an improved lateral energy confinement is provided. The resonator has a bottom electrode in a bottom electrode layer, a top electrode in a top electrode layer and a piezoelectric layer between the bottom electrode layer and the top electrode layer. The piezoelectric layer comprises piezoelectric materials of different piezoelectric polarities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.