Patent · US Active

BAW resonator, RF filter, multiplexer and method of manufacturing a BAW resonator

US11482985B2 · kind B2 · utility

1Cited by
0References
26Claims
0Family size

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Key dates

Filing dateFeb 27, 2019
Grant dateOct 25, 2022
Priority date
Expiry dateFeb 27, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03H2003/045
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

A BAW resonator with an improved lateral energy confinement is provided. The resonator has a bottom electrode in a bottom electrode layer, a top electrode in a top electrode layer and a piezoelectric layer between the bottom electrode layer and the top electrode layer. The piezoelectric layer comprises piezoelectric materials of different piezoelectric polarities.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.