Patent · US Active

Quantum dot light-emitting diode and method for fabricating the same

US11485908B2 · kind B2 · utility

0Cited by

0References

20Claims

0Family size

Assignee

TCL TECHNOLOGY GROUP CORPORATION · CN

Inventors

Zhurong Liang · Huizhou, CN
Weiran Cao · Longbeilingcun, CN
Lei Qian · Huizhou, CN

Key dates

Filing date	Jul 18, 2019
Grant date	Nov 1, 2022
Priority date	—
Expiry date	Aug 31, 2039

Classification

Technology area (CPC H)Electricity
CPC primaryH10K2102/00
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A quantum dot light-emitting diode and a method for fabricating the same. The quantum dot light-emitting diode, includes: an anode, a cathode, and a quantum dot light-emitting layer arranged between the anode and the cathode. A composite electron transport layer is arranged between the cathode and the quantum dot light-emitting layer, and the composite electron transport layer contains an electron transport material and an ultraviolet absorbing material.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.