Microwave plasma reactor for manufacturing synthetic diamond material
US11488805B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2019 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | Jun 28, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32284
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition includes a microwave generator configured to generate microwaves at a frequency f, a plasma chamber that defines a resonance cavity for supporting a microwave resonance mode, a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber, a gas flow system for feeding process gases into the plasma chamber and removing them therefrom, and a substrate holder disposed in the plasma chamber and having a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use. The resonance cavity is configured to have a height that supports a TM011 resonant mode at the frequency f and is further configured to have a diameter that satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.