Film forming method and crystalline multilayer structure
US11488821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 21, 2019 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | Sep 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/80
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The disclosure provides a film forming method that enables to obtain an epitaxial film with reduced defects such as dislocations due to a reduced facet growth industrially advantageously, even if the epitaxial film has a corundum structure. When forming an epitaxial film on a crystal-growth surface of a corundum-structured crystal substrate directly or via another layer, using the crystal substrate having an uneven portion on the crystal-growth surface of the crystal substrate, generating and floating atomized droplets by atomizing a raw material solution including a metal; carrying the floated atomized droplets onto a surface of the crystal substrate by using a carrier gas; and causing a thermal reaction of the atomized droplets in a condition of a supply rate limiting state.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.