Semiconductor substrate measuring apparatus and plasma treatment apparatus using the same
US11488875B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2020 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | Mar 25, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32935
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor substrate measuring apparatus includes a light source to generate irradiation light having a sequence of on/off at a predetermined interval, the light source to provide the irradiation light to a chamber with an internal space for processing a semiconductor substrate using plasma, an optical device between the light source and the chamber, the optical device to split a first measurement light into a first optical path, condensed while the light source is turned on, to split a second measurement light into a second optical path, condensed while the light source is turned off, and to synchronize with the on/off sequence, and a photodetector connected to the first and second optical paths, the photodetector to subtract spectra of first and second measurement lights to detect spectrum of reflected light, and to detect plasma emission light emitted from the plasma based on the spectrum of the second measurement light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.