Silver nano-twinned thin film structure and method for forming the same
US11488920B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 9, 2020 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | Apr 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/35121
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A silver nano-twinned thin film structure and a method for forming the same are provided. A silver nano-twinned thin film structure, including: a substrate; an adhesive-lattice-buffer layer over the substrate; and a silver nano-twinned thin film over the adhesive-lattice-buffer layer, wherein the silver nano-twinned thin film comprises parallel-arranged twin boundaries, and a cross-section of the silver nano-twinned thin film reveals that 50% or more of all twin boundaries are parallel-arranged twin boundaries, wherein the parallel-arranged twin boundaries include Σ3 and Σ9 boundaries, wherein the Σ3 and Σ9 boundaries include 95% or more crystal orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.