Semiconductor device electrodes including fluorine
US11488958B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 2020 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | Jul 8, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/30
Abstract
A semiconductor device includes a landing pad on a substrate, a lower electrode on the landing pad, the lower electrode being electrically connected to the landing pad, a dielectric layer on the lower electrode, the dielectric layer extending along a profile of the lower electrode, an upper electrode on the dielectric layer, and an upper plate electrode on the upper electrode and including first fluorine (F) therein, wherein the upper plate electrode includes an interface facing the upper electrode, and wherein the upper plate electrode includes a portion in which a concentration of the first fluorine decreases as a distance from the interface of the upper plate electrode increases.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.