Eight-transistor static random access memory cell
US11488967B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2021 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | May 26, 2041 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/417
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Disclosed are memory structure embodiments including a memory cell and, particularly, an eight-transistor (8T) static random access memory (SRAM) cell with high device density and symmetry. In the 8T SRAM cell, an isolation region is positioned laterally between two semiconductor bodies. Four gate structures traverse the semiconductor bodies. Four p-type transistors, including two p-type pass-gate transistors and two pull-up transistors between the p-type pass-gate transistors, are on one semiconductor body. Four n-type transistors, including two n-type pass-gate transistors and two pull-down transistors between the n-type pass-gate transistors, are on the other. Adjacent p-type and n-type transistors on the different semiconductor bodies share a gate structure. Various interconnects (including, but not limited to, silicide bridges and/or contact straps) provide the internal and electrical connections required for making the 8T SRAM cell operational and for incorporating the 8T SRAM cell into an array of such cells.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.