Thin film transistor, manufacturing method of thin film transistor and display device
US11489052B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 17, 2019 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | May 4, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
Abstract
The present disclosure provides a thin film transistor, a manufacturing method of the thin film transistor and a display device, configured to improve electrical property of the thin film transistor. The thin film transistor includes: an active layer, including a source and drain contact region and a channel region; a metal barrier layer, covering the source and drain contact region; a first gate insulating layer, at least covering the channel region and exposing the metal barrier layer; a gate, on the first gate insulating layer and covering the channel region; an inner layer dielectric layer, on the gate and having a through hole exposing the metal barrier layer; and a source and drain, on the inner layer dielectric layer and in contact with the metal barrier layer through the through hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.