Light sensing device having offset gate electrode and light sensing panel using the same
US11489085B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2021 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | Jul 26, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/241
Abstract
A light sensing device includes a substrate, a gate electrode, a shielding electrode, a insulating layer, a semiconductor layer, a source electrode, and a drain electrode. The gate electrode and the shielding electrode are disposed over the substrate and spaced apart from each other. The insulating layer is disposed over the gate electrode and the shielding electrode. The semiconductor layer is disposed over the insulating layer. The source and drain electrodes are respectively connected to the semiconductor layer, and the semiconductor layer has a channel region between the source and drain electrodes. The channel region is divided into a first region adjacent to the drain electrode and overlapping the gate electrode and a second region adjacent to the source electrode and not overlapping the gate electrode, and the second region partially overlaps the shielding electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.