BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation

US11489108B2 · kind B2 · utility

Assignee

• Western Digital Technologies, Inc. · US

Inventors

• Quang Le · San Jose, US
• Cherngye Hwang · San Jose, US
• Brian R. York · San Jose, US
• Andrew Chen · San Jose, US
• Thao A. Nguyen · San Jose, US
• Yongchul Ahn · San Jose, US
• Xiaoyong Liu · San Jose, US
• Hongquan Jiang · Madison, US
• Zheng Gao · San Jose, US
• Kuok San Ho · Emerald Hills, US

Key dates

• Filing date: Apr 28, 2020
• Grant date: Nov 1, 2022
• Expiry date: Jan 12, 2041

Classification

• Technology area (CPC G): Physics
• CPC primary: G11B2005/0032
• WIPO field: Audio-visual technology
• WIPO sector: Electrical engineering

Abstract

A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.