Imaging element, stacked-type imaging element, and solid-state imaging apparatus
US11490044B2 · kind B2 · utility
2Cited by
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9Claims
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Key dates
| Filing date | May 30, 2018 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | Oct 27, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
There is provided an imaging element including: a photoelectric conversion unit formed by stacking a first electrode 21, a photoelectric conversion layer, and a second electrode, in which the photoelectric conversion unit further includes a charge storage electrode 24 that has an opposite region 24a opposite to the first electrode 21 via an insulating layer 82, and a transfer control electrode 25 that is opposite to the first electrode 21 and the charge storage electrode 24 via the insulating layer 82, and the photoelectric conversion layer is disposed above at least the charge storage electrode 24 via the insulating layer 82.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.