Method and apparatus for the thermal treatment of a substrate
US11490473B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Jun 14, 2017 |
| Grant date | Nov 1, 2022 |
| Priority date | — |
| Expiry date | Dec 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In an apparatus for thermal treatment of substrates, a gas discharge lamp runs in a simmer mode in standby operation. A constant power supply may be connected to the gas discharge lamp via a first switch. At least one charged capacitor may be connected to the gas discharge lamp via a second switch. A thermal treatment of the end side of a substrate with a duration of between 20 milliseconds and 500 milliseconds is provided in a manner governed by light absorption. This time window is advantageous for thermal treatment of coatings having a thickness of 2 to 200 micrometers, wherein the temperature of the rear side of the substrate can remain below that of the end side. The temperature on the end side can be significantly increased by the gas discharge lamp being connected to the capacitor via the second switch at the end of the time window.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.