Manufacturing method for semiconductor laminated film, and semiconductor laminated film

US11492696B2 · kind B2 · utility

Assignees

• NATIONAL UNIVERSITY ORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY · JP
• NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY · JP

Inventors

• Yoshiyuki Suda · Koganei, JP
• Takahiro Tsukamoto · Hoya, DE
• Akira MOTOHASHI · Tokyo, JP
• Kyohei Degura · Fuchu, JP
• Katsumi Okubo · Fuchu, JP
• Takuma YAGI · Sapporo, JP
• Akifumi KASAMATSU · Koganei, JP
• Nobumitsu Hirose · Tokyo, JP
• Toshiaki Matsui · Koganei, JP

Key dates

• Filing date: Jul 12, 2017
• Grant date: Nov 8, 2022
• Expiry date: Jul 3, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/471
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A method of producing a semiconductor laminate film includes forming a semiconductor layer containing silicon and germanium on a silicon substrate by a sputtering method. In the sputtering method, a film formation temperature of the semiconductor layer is less than 500° C., and a film formation pressure of the semiconductor layer ranges from 1 mTorr to 11 mTorr, or, a film formation temperature of the semiconductor layer is less than 600° C., and a film formation pressure of the semiconductor layer is equal to or more than 2 mTorr and less than 5 mTorr. The sputtering method uses a sputtering gas having a volume ratio of a hydrogen gas of less than 0.1%, and the semiconductor layer satisfies a relationship of t≤0.881×x−4.79, where t represents a thickness (nm) of the semiconductor layer, and x represents a ratio of the number of germanium atoms to a sum of the number of silicon atoms and the number of germanium atoms in the semiconductor layer.